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| Datasheet File OCR Text: |
| NTE2521 Silicon NPN Transistor Video Output for HDTV Features: D High Gain Bandwidth Product: fT = 400MHz Typ D High Breakdown Voltage: VCEO 250V Min D High Current D Low Reverse Transfer Capacitance and Excellent HF Response Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Collector Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance Reverse Transfer Capacitance Symbol ICBO IEBO hFE fT Cob Cre Test Conditions VCB = 150V, IE = 0 VEB = 2V, IC = 0 VCE = 10V, IC = 50mA VCE = 10V, IC = 250mA VCE = 30V, IC = 100mA VCB = 30V, f = 1MHz VCB = 30V, f = 1MHz Min - - 60 20 - - - Typ - - - - 400 4.2 3.4 Max 0.1 0.1 320 - - - - MHz pF pF Unit A A Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Symbol VCE(sat) VBE(sat) Test Conditions IC = 50mA, IB = 5mA IC = 50mA, IB = 5mA Min - - 250 250 3 Typ - - - - - Max 1.0 1.0 - - - Unit V V V V V V(BR)CBO IC = 10A, IE = 0 V(BR)CEO IC = 1mA, RBE = V(BR)EBO IE = 100A, IC = 0 .315 (8.0) .130 (3.3) .118 (3.0) Dia .433 (11.0) .295 (7.5) E C B .610 (15.5) .094 (2.4) |
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